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Depending on adding die attach material (DAF)
and phosphorus and > 5 × 1016 atoms/cm3
This Test Method can be used for silicon in which the oxygen content is greater than the SIMS instrumental oxygen background as measured in a float zone silicon sample
SEMI E79-0200 (technical revision)
org in June 2016
P02400 - SEMI P24 - CD測長手順 Revision:SEMI P24-94 (Reapproved 1104) - Inactive Depending on adding die attachNOTICE: This translation is a REFERENCE COPY ONLY. If differences should exist between the English version and a translation in any other language, the English version is the official and authoritative version. SEMI SEMI Global Micropatterning CommitteeNorth American Microlithography Committee2004711North American Regional Standards Committee20049www. semi. org2004111994 NOTICE: This Standard or Safety Guideline has an Inactive Status because the