MF095000 - SEMI MF950 - Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching Revision:SEMI MF950-1107 (Reapproved 1023) - Current • To establish performance criteria

• To establish performance criteria when purchasing ultrapure water (UPW) purification equipment

integrated circuits

This Standard specifies measurement methods

Hydrochlorination consumes a large amount of silicon powder

SEMI E148-0309 (technical revision)

MF095000 - SEMI MF950 - Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching Revision:SEMI MF950-1107 (Reapproved 1023) - Current • To establish performance criteriaThis Test Method covers a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat treatment of the wafer. Such damage results from mechanical surface treatments such as sawing, lapping, grinding, sandblasting, and shot peening. The damage is revealed by a preferential etch that removes silicon in the region of the deformation. Preferential etching occurs because the chemical potential in the region of